EIC8596-4 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised july 2004 8.50-9.60 ghz 4-watt in ternally-matched power fet issued date: 06-07-04 features ? 8.50 ? 9.60 ghz bandwidth ? input/output impedance matched to 50 ohms ? +36.5 dbm output power at 1db compression ? 7.5 db power gain at 1db compression ? 30% power added efficiency ? -43 dbc im3 at po = 25.5 dbm scl ? hermetic metal flange package ? 100% tested for dc, rf, and r th description the EIC8596-4 is a high power, highly linear, single stage mfet amplifier in a flange mount package. this amplifier features excelics? unique mesfet transistor technology. caution! esd sensitive device. electrical characteristics (t a = 25 c) symbol parameters/test conditions 1 min typ max units p 1db output power at 1db compression f = 8.50-9.60ghz v ds = 10 v, i dsq 1100ma 35.5 36.5 dbm g 1db gain at 1db compression f = 8.50-9.60ghz v ds = 10 v, i dsq 1100ma 6.5 7.5 db ? g gain flatness f = 8.50-9.60ghz v ds = 10 v, i dsq 1100ma 0.6 db pae power added efficiency at 1db compression v ds = 10 v, i dsq 1100ma f = 8.50-9.60ghz 30 % id 1db drain current at 1db compression f = 8.50-9.60ghz 1100 1300 ma im3 output 3rd order intermodulation distortion ? f = 10 mhz 2-tone test; pout = 25.5 dbm s.c.l 2 v ds = 10 v, i dsq 65% idss f = 9.60 ghz -40 -43 dbc i dss saturated drain current v ds = 3 v, v gs = 0 v 1800 2200 ma v p pinch-off voltage v ds = 3 v, i ds = 20 ma -2.5 -4.0 v r th thermal resistance 3 5.0 6.0 o c/w notes: 1. tested with 100 ohm gate resistor. 2. s.c.l. = single carrier level. 3. overall rth depends on case mounting.
EIC8596-4 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised july 2004 absolute maximum ratings for continuous operation 1,2 symbol characteristic value v ds drain to source voltage 10 v v gs gate to source voltage -4.5 v i ds drain current idss i gsf forward gate current 40 ma p in input power @ 3db compression p t total power dissipation 20 w t ch channel temperature 150c t stg storage temperature -65/+150c notes: 1. operating the device beyond any of the above ratings may result in permanent damage or reduction of mttf. 2. bias conditions must also satisfy the following equation p t < (t ch ?t pkg )/r th ; where t pkg = temperature of package, and p t = (v ds * i ds ) ? (p out ? p in ). performance data typical s-parameters (t= 25c, 50 ? system, de-embedded to edge of package) v ds = 10 v, i dsq 1100ma freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang 8.00 0.639 -131.090 2.971 -43. 850 0.075 -95.770 0.381 79.650 8.25 0.589 -162.210 3.029 -71.870 0.085 -125.560 0.387 47.150 8.50 0.553 167.390 3.042 -98.89 0 0.095 -152.800 0.384 17.300 8.75 0.535 138.050 2.997 -125.900 0.103 -179.370 0.364 -10.280 9.00 0.516 111.210 2.947 -152.0 10 0.107 155.110 0.331 -38.730 9.25 0.479 86.150 2.924 -178.400 0.115 128.390 0.308 -71.620 9.50 0.406 62.550 2.918 154.530 0.119 102.590 0.309 -108.380 9.75 0.292 36.850 2.901 125.240 0.127 74.230 0.336 -152.650 10.00 0.123 5.160 2.779 94.570 0.128 44.690 0.403 163.780 10.25 0.085 -167.640 2.588 62.670 0.123 13.470 0.499 126.800 10.50 0.278 157.010 2.245 31.830 0.112 -17.580 0.564 94.870 0 1.0 -1.0 1.0 10.0 - 1 0 . 0 1 0 . 0 5.0 - 5 . 0 5 . 0 2.0 - 2 . 0 2 . 0 3.0 - 3 . 0 3 . 0 4.0 - 4 . 0 4 . 0 0.2 - 0 . 2 0 . 2 0.4 - 0 . 4 0 . 4 0.6 - 0 . 6 0 . 6 0.8 - 0 . 8 0 . 8 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 and s22 swp max 10ghz swp min 8ghz s[1,1] * EIC8596-4 s[2,2] * EIC8596-4 8 8.5 9 9.5 10 frequency (ghz) s21 and s12 -30 -20 -10 0 10 20 s21 and s12 (db) db(|s[2,1]|) * EIC8596-4 db(|s[1,2]|) * EIC8596-4
EIC8596-4 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 3 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised july 2004 power de-rating curve and im3 definition power dissipation vs. temperature 0 5 10 15 20 25 0 25 50 75 100 125 150 case temperature (c) total power dissipation (w) safe operating region potentially unsaf e operating region f1 f2 (2f1-f2) f1 f2 (2f2-f1) im3 pout pin ip 3 = pout + im3/2 third-order intercept point ip3 f1 or f2 (2f2 - f1) or (2f1 - f2) pin [s.c.l.] (dbm) pout [s.c.l.] (dbm) im3 typical power data (v ds = 10 v, i dsq = 1100 ma) typical im3 data (v ds = 10 v, i dsq 65% idss ) p-1db & g-1db vs frequency 32 33 34 35 36 37 8.48.68.89.09.29.49.69.8 frequency (ghz) p-1db (dbm) 7 8 9 10 11 12 g-1db (db) p-1db (dbm) g-1db (db) im3 vs output power f 1 = 9.05 ghz, f 2 = 9.04 ghz -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 pout [s.c.l.] (dbm) im3 (dbc ) im3 (dbc)
EIC8596-4 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 4 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised july 2004 package outline dimensions in inches, tolerance + .005 unless otherwise specified excelics sn ym ordering information part number grade 1 f test (ghz) p 1db (min) im 3 (min) 2 EIC8596-4 industrial 8.50-9.60 ghz 35.5 -40 notes: 1. contact factory for military and hi-rel grades. 2. exact test conditions are specified in ?electrical characteristics? table. EIC8596-4 source
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